Question

Barrier potential of P – n junction diode does not depend on –
$\left(A\right)$ Diode design
$\left(B\right)$ Temperature
$\left(C\right)$ Forward bias
$\left(D\right)$ Doping density

Answer 1

- Hint: The concept that barrier potential used to render P – n junction diode whether it is silicon (Si) or germanium (Ge) was used in this issue, and the concept that forward bias makes current through a PN junction was also used. Bias voltage provides the free electrons with sufficient energy to overcome the barrier potential and move into the P region, so use this concept to solve the problem.

Complete step-by-step solution -

The electric field formed in the region of depletion serves as a barrier.
To get the electrons to pass through the boundary of the electric field, external energy must be applied.
The potential difference needed for moving the electrons through the electric field is called the potential barrier.
A PN junction's barrier potential depends on the form of semiconductor material, the amount of doping, temperature and forward bias, and the reverse bias.
That is about 0.7V for silicon, and about 0.3V for germanium.
And forward bias allows for current through a junction with a PN. Bias tension provides the free electrons with sufficient energy to overcome the barrier potential and move into the P region.
Hence the potential barrier depends on the quantity of doping, temperature and forward bias, as well as reverse bias.
But this is not based on the nature of the diode.
So this is the required answer.
Hence option (A) is the correct answer.

Note – The potential barrier in the PN-junction diode is the barrier where additional force is needed for the load to cross the area. In other words, the area through which the obstructive force has stopped the charge carrier is known as the potential barrier.