A junction known as the p-n junction is an interface or a boundary which is present between two semiconductor material types. These material types are namely the p-type and the n-type inside a semiconductor.
The side which is known as the p-side or the positive side of the semiconductor has an excess of holes and the n-side or the negative side has an excess of electrons. In a semiconductor, we can say that the p-n junction is created by the method of doping. The process that is basically of doping is explained in further detail in the next section.
What is PN Junction Doping?
As we already know that if we use different semiconductor or the different materials to make a p-n junction then there will be a grain boundary that would inhibit the movement of electrons from one side to the other by scattering the electrons and holes. Thus, here we use the process that is known as doping.
We will understand the process of doping with the help of this example. Let us now further consider a thin p-type silicon semiconductor sheet. Now again If we add a small amount that is of pentavalent impurity to this thing we can see that a part of the p-type Si will get converted to n-type silicon. This sheet which we are talking about will now contain both p-type region and n-type region and a junction which is between these two regions. The processes that we have talked about we need to follow after the formation of a p-n junction are of two types – diffusion and drift.
As we already have this thing in our mind that there is a difference in the concentration of holes and electrons at the two sides of a junction, the holes from the p-side diffuse to the n-side and the electrons from the n-side diffuse to the p-side. Now we can notice that these give rise to a diffusion current across the junction. Also, we will notice that when an electron diffuses from the n-side to the p-side then at that moment an ionized donor is left behind on the n-side that is immobile. As this whole process goes on we can see a layer of positive charge is developed on the n-side of the junction. Similarly, we can say that when a hole goes that too from the p-side to the n-side then we can say that an ionized acceptor is left behind in the p-side which then results in the formation of a layer of negative charges in the p-side of the junction. This region which we have seen here is of positive charge and negative charge on either side of the junction is termed as the depletion region.
These all things which are due to this positive space charge region on either side of the junction. An electric field direction from a positive charge towards the negative charge is developed. Now again we can see that due to this electric field that an electron on the p-side of the junction moves to the n-side of the junction. This motion which we have already seen is termed as the drift. Here we can easily notice that the direction of drift current is opposite to that of the diffusion current.
Application of PN Junction Diode
The junction which is the p-n junction diode can be used as a photodiode, the diode which is sensitive to the light when the configuration of the diode is reverse-biased.
It can be used as a solar cell.
When the diode is forward-biased then it can be used in LED lighting applications.
We can see that it is also used as rectifiers in many electric circuits and as a voltage-controlled oscillator in varactors.
There are two operating regions in the p-n junction diode:
Then the N-type
There are also three biasing conditions which are generally for the junction which is the p-n junction diode and this is based on the voltage applied:
Zero bias: there is no external voltage applied to the p-n junction diode.
Forward bias: which is the positive terminal that is of the voltage potential is connected to the p-type while the negative terminal which is connected to the n-type.
Reverse bias: that is we can say that the negative terminal which is of the voltage potential is connected to the p-type and the positive is connected to the n-type.