Question

The threshold voltage of an n-channel MOSFET can be increased by:
A. Increasing the channel dopant concentration
B. Reducing the channel length
C. Reducing the gate oxide thickness
D. Reducing the channel dopant concentration

Answer 1

Hint: Threshold voltage is the base measure of \[{{V}_{GS}}\] at which channel is enhanced among channel and source. so current \[{{I}_{0}}\] forms when \[{{V}_{DS}}\] (channel to source) voltage \[{{n}_{a}}\] is applied.

Complete step-by-step answer:
If the channel dopent fixation expands, minority transporters (np) diminishes. We should apply more voltage to get the same charge (Ie required charge). Thus, the limit voltage of n-channel MOSFET can be expanded.
The correct answer is D.
The metal–oxide–semiconductor field-impact semiconductor (MOSFET, MOS-FET, or MOSFET), otherwise called the metal–oxide–silicon semiconductor (MOS semiconductor, or MOS), is a sort of protected door field-impact semiconductor that is created by the controlled oxidation of a semiconductor, normally silicon.
The voltage of the secured door decides the electrical conductivity of the gadget; this capacity to change conductivity with the measure of applied voltage can be utilized for intensifying or exchanging electronic signs.
MOSFETs can either be produced as a component of MOS coordinated circuit chips or as discrete MOSFET gadgets, (for example, a power MOSFET), and can appear as single-door or multi-entryway semiconductors.
The MOSFETs can be made with either p-type or n-type semiconductors (PMOS or NMOS rationale, separately), integral sets of MOSFETs can be utilized to make exchanging circuits with low power utilization: CMOS (Complementary MOS) rationale.

Note: The name "metal–oxide–semiconductor" (MOS) commonly alludes to a metal door, oxide protection, and semiconductor (regularly silicon). The "metal" in the name MOSFET is in some cases a misnomer, on the grounds that the entryway material can likewise be a layer of polysilicon (polycrystalline silicon).
Along with oxide, diverse dielectric materials can likewise be utilized with the point of getting solid channels with littler applied voltages. The MOS capacitor is likewise part of the MOSFET structure.