Question

In forward bias of p-n junction, the potential barrier
A. increases
B. decreases
C. remains unchanged
D. becomes zero

Answer 1

Hint: In this question, first we have to know the term semiconductors. Semiconductors are the material that shows a conductive character within conductors and non-conductors. It is made up of pure elements. Also we have to know the term forward biasing. Forward biasing is the setting a voltage across a diode that provides current to move easily.

Complete step by step answer:
A term p-n junction is a boundary between two semiconductor materials that is p-type and the n-type. The p-side is located on the positive side of the semiconductor and it holds an excess of holes and the n-side located on the negative side of the semiconductor and it holds an excess of an electron.

We know that in forward biasing, the p-type is connected with the positive terminal, while the n-type is connected with the negative terminal of the battery.

So, due to this kind of connections, the holes in the p-type region and the electrons in the n-type region are shifted towards the junction that causes the reduction in the width of the depletion layer. So, the distance between the diffused holes and electrons reduces. Due to this, the electric field in the depletion region decreases. Hence, the potential barrier decreases.

Thus, the correct option is (B).

Note:In this question, we have to know the concept of semiconductor, biasing, p-n junction and depletion layer. We have to know the effect of changing the depletion layer on the potential barrier, so that we can easily get the answer to this question.