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When p-n junction diode is forward biased, then:
A. the depletion region is reduced and the barrier height is increased.
B. the depletion region is widened and the barrier height is reduced.
C. both the depletion region and the barrier height are reduced.
D. both the depletion region and the barrier height are increased.

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Last updated date: 16th Jun 2024
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Answer
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Hint:We can form a p-n junction diode when a p-type semiconductor and an n-type semiconductor is fused. This creates a potential barrier between them. This semiconductor device helps to determine the current flow in a circuit. When the p-n junction diode is forward biased, a negative voltage is formed on the N-side and a positive voltage is formed on the P-side.

Complete answer:

During forward bias of pn junction diode, we are aware of the fact that the p type semiconductor is connected to the positive terminal and the n type semiconductor is connected to the negative terminal. This causes the holes as well as the electrons to migrate towards the junction from the p and n regions respectively. As they come closer and closer, the width of the depletion layer decreases. The distance between the diffused electrons and holes start to get reduced and this causes a decrease in the electric field in the depletion area. Thus we can conclude that there will be a decrease in the barrier potential.

Hence, option C is the correct.

Note:The p-n junction diode is capable of working in different biases. Hence it finds various applications in our daily lives. It has various functions in forward bias and reverse bias. In reverse bias, the reverse output of the forward bias is obtained.