
In PN- junction diodes the reverse saturation current is amp at . The forward current for a voltage of volt is
amp
amp
amp
amp
Answer
498.3k+ views
Hint: Diode: It is a two-terminal electronic device that produces current primarily in one direction; it has low resistance in one direction and high resistance in other direction.
P-type semiconductor: Trivalent impurity (Boron, Gallium, Indium, and Aluminum) is added to an intrinsic or pure semiconductor (Silicon, Germanium).
N-type semiconductor: Pentavalent impurity (Arsenic, Antimony, and Phosphorus) is added to an intrinsic or pure semiconductor (Silicon, Germanium).
PN-junction: It is formed when a p-type semiconductor is fused to an n-type semiconductor.
Formula used:
,
Here forward current in the PN-junction, saturation current in the PN-junction,
Charge of the electron, voltage source, Boltzmann’s constant, absolute temperature
Complete step by step answer:
It is given that the question, , = ,
Now using the values and formula we get that
On some simplification we get,
A
Hence the correct option is .
Note:
Forward current: If the electrical current flows in the direction of lower resistance in a diode is called forward current.
A certain amount of positive voltage to be applied across the PN-junction to perform forward current.
A steady or equilibrium stage will be reached whereby electrons are diffusing out of the N-region and drifting (pulling by the huge positive charge left behind) back in at the same rate.
PN-junction is used in solar cells, a forward-biased diode is used in LED, and it is also used in rectifiers in many electric circuits.
In a PN-junction diode, the reverse saturation current is due to the diffusive flow of minority electrons from the p-side to the n-side and the holes move from the n-side to the p-side.
P-type semiconductor: Trivalent impurity (Boron, Gallium, Indium, and Aluminum) is added to an intrinsic or pure semiconductor (Silicon, Germanium).
N-type semiconductor: Pentavalent impurity (Arsenic, Antimony, and Phosphorus) is added to an intrinsic or pure semiconductor (Silicon, Germanium).
PN-junction: It is formed when a p-type semiconductor is fused to an n-type semiconductor.
Formula used:
Here
Complete step by step answer:
It is given that the question,
Now using the values and formula we get that
On some simplification we get,
Hence the correct option is
Note:
Forward current: If the electrical current flows in the direction of lower resistance in a diode is called forward current.
A certain amount of positive voltage to be applied across the PN-junction to perform forward current.
A steady or equilibrium stage will be reached whereby electrons are diffusing out of the N-region and drifting (pulling by the huge positive charge left behind) back in at the same rate.
PN-junction is used in solar cells, a forward-biased diode is used in LED, and it is also used in rectifiers in many electric circuits.
In a PN-junction diode, the reverse saturation current is due to the diffusive flow of minority electrons from the p-side to the n-side and the holes move from the n-side to the p-side.
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