Question

In n-p-n transistors, the p-type crystal acts as?

Answer 1

Hint: A transistor is a semiconductor device that is used to amplify or switch electrical impulses and power. Transistors are a fundamental component of contemporary electronics. It's made of semiconductor material and has at least three terminals for connecting to a circuit outside of it. The current through another pair of terminals is controlled by a voltage or current provided to one pair of transistor terminals. A transistor can magn

Complete Step By Step Answer:
Bipolar junction transistors (BJTs) are charge carriers that employ both electrons and electron holes. BJTs are made up of two junctions between two semiconductor kinds, n-type and p-type, which are areas inside a single crystal. The junctions may be created in a variety of ways, including altering the doping of the semiconductor material as it grows, depositing metal pellets to produce alloy junctions, and diffusing n-type and p-type doping chemicals into the crystal.
Two semiconductor junctions share a narrow p-doped region in an NPN transistor, and two semiconductor junctions share a thin n-doped region in a PNP transistor. P-type means doped with impurities that give holes that readily receive electrons, whereas N-type means doped with impurities that provide mobile electrons. Emitter, base, and collector are the three areas of a BJT. In comparison to the other two layers, the emitter area is strongly doped, while the collector is doped less heavily than the base (collector doping is generally ten times less than base doping).
The p-type crystal acts as a base in the n-p-n transistor. The base–emitter junction is forward-biased in normal operation, meaning the p-doped side of the junction is at a higher potential than the n-doped side, while the base–collector junction is reverse-biased. The equilibrium between thermally produced carriers and the repulsive electric field of the n-doped emitter depletion area is disrupted when forward bias is given to the base–emitter junction. Thermally excited electrons (in an NPN; holes in a PNP) can now inject into the base area from the emitter.

Note:
The emitter area, the base region, and the collector region are the three distinct doped semiconductor regions that make up a BJT. In a PNP transistor, these areas are p type, n type, and p type, whereas in an NPN transistor, they are n type, p type, and n type. Each semiconductor area is linked to one of three terminals: emitter (E), base (B), and collector (C) (C). The base is composed of weakly doped, high-resistivity material that is physically placed between the emitter and the collector.