A zener diode
(A) Is a lightly doped junction diode
(B) Heavily doped junction diode
(C) Is either p-type or n-type
(D) Has no p-n junction
Answer
618.9k+ views
Hint: The opposite breakdown voltage relies upon doping of the diode. Subsequently, in the Zener diode the hefty doping of its p-n intersection is finished. The consumption area framed in the diode is exceptionally slim and the opposite predisposition voltage of about which is not exactly conventional diode.
Complete step by step answer:
-Zener diodes are exceptionally doped diodes. This implies their conduct in forward predisposition will be the same as an ordinary diode. Be that as it may, while in invert predisposition their intersection potential is expanded. So that implies when the voltage crosses 6V then the diode is in Reverse breakdown and henceforth the current through the diode increments quickly.
-The more exceptionally doped a semiconductor is, the more slender the exhaustion area and it is the consumption district that recognizes the structure of a passage diode and a zener diode. Both are "exceptionally doped" on the grounds that they need a ton of transporters to work. Doping controls the width of the consumption area.
-The opposite breakdown voltage relies upon doping of the diode. Subsequently, in the Zener diode the hefty doping of its p-n intersection is finished. The consumption area framed in the diode is exceptionally slim and the opposite predisposition voltage of about which is not exactly conventional diode.
Hence option (B) is the correct answer.
Note: The more exceptionally doped a semiconductor is the more slender the exhaustion area and it is the consumption district that recognizes the structure of a passage diode and a zener diode.
Complete step by step answer:
-Zener diodes are exceptionally doped diodes. This implies their conduct in forward predisposition will be the same as an ordinary diode. Be that as it may, while in invert predisposition their intersection potential is expanded. So that implies when the voltage crosses 6V then the diode is in Reverse breakdown and henceforth the current through the diode increments quickly.
-The more exceptionally doped a semiconductor is, the more slender the exhaustion area and it is the consumption district that recognizes the structure of a passage diode and a zener diode. Both are "exceptionally doped" on the grounds that they need a ton of transporters to work. Doping controls the width of the consumption area.
-The opposite breakdown voltage relies upon doping of the diode. Subsequently, in the Zener diode the hefty doping of its p-n intersection is finished. The consumption area framed in the diode is exceptionally slim and the opposite predisposition voltage of about which is not exactly conventional diode.
Hence option (B) is the correct answer.
Note: The more exceptionally doped a semiconductor is the more slender the exhaustion area and it is the consumption district that recognizes the structure of a passage diode and a zener diode.
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