Question

When a forward bias is applied to a p-n junction, it.

Answer 1

Hint: A p-n junction diode device is made when a p-type semiconductor is fused to an n-type semiconductor forming a potential barrier voltage across the diode junction. Generally, it’s a semiconductor device that controls the flow of current in a circuit. In the forward bias condition, a negative voltage is applied on the N-side and is connected with a negative voltage, and P-side is connected with a positive voltage.

Complete answer:
In the p-n junction diode, a depletion region is made due to the recombination of holes and electrons. Electrons from the n side move towards the p side, and holes from the p side move towards the n side to make the depletion region. As a result, an electric field in the opposite direction is formed whenever the external voltage is applied; this is often nothing but barrier potential.

In forward biasing, the p-type is connected with the positive terminal and thus the n-type is connected with the negative terminal of the battery then, the holes in the p-type region and therefore the electrons within the n-type region are pushed towards the junction which reduces the width of the depletion layer. Also the distance between the diffused holes and electrons decreases which ends up in a decrease in field within the depletion region. Hence, the potential barrier decreases.

Note: The width of the depletion layer in a p-n junction diode decreases in forward bias because of the repulsion of carriers from battery terminals, holes from p-type, and electrons from n-type. Now, due to the small number of ions within the depletion region, its potential decreases.