
As the temperature of transistor increases, the collector current will
A. increase
B. decrease
C. remain constant
D. depend on the situation
Answer
510.9k+ views
Hint: Transistor is a semiconductor device in which the increment in collector current will depend on the flow of electrons ejected from the collector and going into the battery placed on the collector side.
Complete step by step answer:
In the transistor, a p-type semiconductor is placed between two n-type semiconductors or when an n-type semiconductor is placed between two p-type semiconductors. Another name of this type of transistor is junction transistor. If it is a combination of n-p-n semiconductors, then the first layer will be called the emitter, the middle layer will be called the base, and the third layer (another outer layer) is called a collector. These semiconductors are doped with foreign elements. The emitter is highly doped, the collector is moderately doped, and the base is lightly doped with a very thin as compared to others.
The current produced due to the flow of electrons from the collector and going into the battery on the collector side is known as collector current, it is represented by $I_c$
The current produced due to the flow of electrons from the battery on the emitter side into the emitter is called emitter current; it is represented by $I_E$.
The collector current varies with the current of the intrinsic semiconductor between the collector and base. With the increase in temperature of the transistor, the current of the intrinsic semiconductor between collector and base increases.
Therefore, it can be said that as the temperature of the transistor increases, the collector current will increase.
So, the correct answer is “Option A”.
Note:
Electrons are flowing between different junctions, so look carefully at which value of current is to be estimated. For n-p-n and p-np type transistors, the flow of direction of current will change; hence extra care is to be done while defining the current.
Complete step by step answer:
In the transistor, a p-type semiconductor is placed between two n-type semiconductors or when an n-type semiconductor is placed between two p-type semiconductors. Another name of this type of transistor is junction transistor. If it is a combination of n-p-n semiconductors, then the first layer will be called the emitter, the middle layer will be called the base, and the third layer (another outer layer) is called a collector. These semiconductors are doped with foreign elements. The emitter is highly doped, the collector is moderately doped, and the base is lightly doped with a very thin as compared to others.
The current produced due to the flow of electrons from the collector and going into the battery on the collector side is known as collector current, it is represented by $I_c$
The current produced due to the flow of electrons from the battery on the emitter side into the emitter is called emitter current; it is represented by $I_E$.
The collector current varies with the current of the intrinsic semiconductor between the collector and base. With the increase in temperature of the transistor, the current of the intrinsic semiconductor between collector and base increases.
Therefore, it can be said that as the temperature of the transistor increases, the collector current will increase.
So, the correct answer is “Option A”.
Note:
Electrons are flowing between different junctions, so look carefully at which value of current is to be estimated. For n-p-n and p-np type transistors, the flow of direction of current will change; hence extra care is to be done while defining the current.
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